I-SiC-MOSFET

Izinto Zesizukulwane Sesithathu Semiconductor

Njengoba ubuchwepheshe buthuthuka, muva nje i-solid state high frequency welder isebenzisa impahla ye-semiconductor yesizukulwane sesithathu ebizwa ngokuthi i-SiC-MOSFET.

I-Third Generation Semiconductor Materials Izici Zokusebenza Ze-I-SiC-MOSFET

1. Ukushisa okuphezulu nokumelana nokucindezela okukhulu: I-SiC inegebe elibanzi lebhande cishe izikhathi ezi-3 kune-Si, ngakho ingakwazi ukubona amadivaysi amandla angasebenza ngokuzinzile ngisho nangaphansi kwezimo zokushisa eziphezulu. Amandla enkambu yokuhlukaniswa kwe-insulation ye-SiC aphindwe izikhathi ezingu-10 ku-Si, ngakho-ke kungenzeka ukwenza amadivayisi anamandla kagesi aphezulu anokugxiliswa kwe-doping okuphezulu kanye nongqimba oluncane lwefilimu lokukhukhumala oluwugqinsi oluqhathaniswa nemishini ye-Si.

2. Ukwenziwa okuncane kwedivayisi nesisindo esincane: Amadivayisi e-silicone carbide anokuhanjiswa kwe-thermal okuphezulu kanye nokuminyana kwamandla, okungenza kube lula isistimu yokukhipha ukushisa, ukuze kuzuzwe idivayisi encane futhi ingasindi.

3. Ukulahlekelwa okuphansi kanye nemvamisa ephezulu: Imvamisa yokusebenza yamadivayisi we-silicon carbide ingafinyelela izikhathi eziyi-10 kunezisetshenziswa ezisekelwe ku-silicon, futhi ukusebenza kahle akunciphi ngokunyuka kwemvamisa yokusebenza, okunganciphisa ukulahlekelwa kwamandla cishe ngo-50%; Ngesikhathi esifanayo, ngenxa yokwanda kwemvamisa, umthamo wezingxenye ze-peripheral ezifana ne-inductance kanye ne-transformers iyancishiswa, futhi ivolumu nezinye izingxenye zibiza ngemuva kokunciphisa ukubunjwa kwesistimu.

I-I-SiC-MOSFET